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TGF3021-SM

Model Number: TGF3021-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo TGF3021-SM is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from 0.03 to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant, the device is housed in an industry-standard 3 x 4 mm surface mount QFN package.

Part Number: TGF3021-SM
Frequency Min: 0.03 GHz
Frequency Max: 4 GHz
Output Power: 30 W
Gain: 19.3 dB
% Typ Efficiency: 72.7
Supply Voltage: 32 V
Id: 65 mA
Package: QFN
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-TGF3021-SM-001

Part Function	Part Number	Description
Evaluation Board	TGF3021-SM EVB Qorvo	Evauation Board for TGF3021-SM

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Product Specifications For TGF3021-SM RF Power Transistor

Part Number: TGF3021-SM Manufacturer: Qorvo Product Description: RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

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TGF3021-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

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TGF3021-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 4 GHz, 30 W, 19.3 dB, 32 V, GaN, Plastic

Technical Inquiry Request for TGF3021-SM RF Power Transistor

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