RFMD’s SGA-9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 42.5dBm, and P1dB = 27.5dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289Z is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
RFMD's Design Application Note provides time saving design support to optimize circuit performance.
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Part Number:
SGA-9289Z
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Frequency Min:
0.05 GHz
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Frequency Max:
3 GHz
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Output Power:
28 dBm
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Gain:
17.7 dB
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Package:
SOT-89
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Supply Voltage:
5 V
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Id:
280 mA
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Noise Figure:
2.4 dB
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Material:
SiGe
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| Description | Units Per Format | Available |
| Description | Units Per Format | Available |