Status: Discontinued | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz F T process, featuring one-micron emitters with V CEO > 7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM, and narrowband PCS bands.
Part Number:
SGA-1263Z
Min Frequency:
0 GHz
Max Frequency:
4 GHz
P1dB Typ:
-7.8 dBm
Gain Typ:
15.7 dB
Noise Figure Typ:
2.7 dB
Supply Voltage Nominal:
2.8 V
Package:
SMT
Package Style:
SOT-363
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