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TGF2965-SM

Model Number: TGF2965-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Part Number: TGF2965-SM
Frequency Min: 0.03 GHz
Frequency Max: 3 GHz
Output Power: 5 W
Gain: 18 dB
% Typ Efficiency: 63
Supply Voltage: 32 V
Id: 30 mA
Package: QFN 3x3mm
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-TGF2965-SM-001

Part Function	Part Number	Description
Evaluation Board	TGF2965-SM-EVB2 Qorvo	Evaluation board for TGF2965-SM
Complementary Product	TGF3015-SM Qorvo	RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic

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Product Specifications For TGF2965-SM RF Power Transistor

Part Number: TGF2965-SM Manufacturer: Qorvo Product Description: RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN

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Description	Units Per Format	Available

Description	Units Per Format	Available

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TGF2965-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN

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TGF2965-SM

RF Power Transistor from Qorvo

RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN

Technical Inquiry Request for TGF2965-SM RF Power Transistor

Software Terms & Conditions

Quick Links

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