Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
The TriQuint T2G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Features:
  • Frequency: DC to 3.5 GHz
  • Linear Gain: > 15 dB at 3.5 GHz
  • Operating Voltage: 28 V
  • Output Power (P3dB): 55 W at 3.5 GHz
  • Lead-free and RoHS compliant
    • Part Number:
    T2G4005528-FS
    Frequency Min:
    0 GHz
    Frequency Max:
    3.5 GHz
    Output Power:
    55 W
    Gain:
    16 dB
    % Typ Efficiency:
    56.7
    Supply Voltage:
    28 V
    Id:
    200 mA
    Package:
    Earless
    Process:
    GaN
    Type:
    RF Power Discrete Transistors

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    Product Specifications For T2G4005528-FS RF Power Transistor
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