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T2G4003532-FL

Model Number: T2G4003532-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Part Number: T2G4003532-FL
Frequency Min: 0 GHz
Frequency Max: 3.5 GHz
Output Power: 35 W
Gain: 16 dB
% Typ Efficiency: 50
Supply Voltage: 32 V
Id: 1900 mA
Package: Flange
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-T2G4003532-FL-001

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Product Specifications For T2G4003532-FL RF Power Transistor

Part Number: T2G4003532-FL Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

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Description	Units Per Format	Available

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T2G4003532-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

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T2G4003532-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

Technical Inquiry Request for T2G4003532-FL RF Power Transistor

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