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T1G4012036-FS

Model Number: T1G4012036-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC- 3.5 GHz, 120 W, 16 dB, 36 V, GaN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The TriQuint T1G4012036-FS is a 120 W Peak (24 W avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Part Number: T1G4012036-FS
Export Status:
Frequency Min: 0 GHz
Frequency Max: 3.5 GHz
Output Power: 120 W
Gain: 16 dB
% Typ Efficiency: 52
Supply Voltage: 36 V
Id: 360 mA
Package: Earless
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	T1G4012036-FS-EVB1 Qorvo	Evaluation board for T1G4012036-FS or T1G4012036-FL
Complementary Product	T1G4012036-FL Qorvo	RF Power Transistor, DC- 3.5 GHz, 120 W, 16 dB, 36 V, GaN

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Part Number: T1G4012036-FS Manufacturer: Qorvo Product Description: RF Power Transistor, DC- 3.5 GHz, 120 W, 16 dB, 36 V, GaN

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T1G4012036-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC- 3.5 GHz, 120 W, 16 dB, 36 V, GaN

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T1G4012036-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC- 3.5 GHz, 120 W, 16 dB, 36 V, GaN

Technical Inquiry Request for T1G4012036-FS RF Power Transistor

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