Qorvo

Status: Discontinued | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC to 20 GHz. The part is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides greater than 31 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications. The TGF2022-12 is also ideally suited for point-to-point radio, high-reliability space and military applications. The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

Features:
  • Frequency range: DC to 20 GHz
  • > 31 dBm nominal Psat
  • 58% maximum PAE
  • 39 dBm nominal OIP3
  • 13 dB nominal power gain
  • Suitable for high reliability applications
  • 1.2 mm x 0.35 um Power pHEMT
  • Nominal bias Vd = 8 to 12 V, Idq = 90 to 150 mA (under RF drive, Id rises from 90 mA to 300 mA)
  • Chip dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in)
    • Part Number:
    TGF2022-12
    Frequency Min:
    0 GHz
    Frequency Max:
    20 GHz
    Output Power:
    1.2 W
    Gain:
    13 dB
    % Typ Efficiency:
    51.9
    Supply Voltage:
    12 V
    Id:
    150 mA
    Package:
    DIE
    Process:
    GaAs
    Type:
    RF Power Discrete Transistors
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