Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
The TriQuint T2G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides greater than 10 dB gain at 6 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. This part is lead-free and RoHS compliant. Evaluation boards are available upon request.

Features:
  • Frequency: DC to 6 GHz
  • Output Power (P3dB): 18 W at 6 GHz
  • Linear Gain: > 10 dB at 6 GHz
  • Operating Voltage: 28 V
  • Low thermal resistance package
    • Part Number:
    T2G6001528-Q3
    Frequency Min:
    0 GHz
    Frequency Max:
    6 GHz
    Output Power:
    18 W
    Gain:
    9 dB
    Supply Voltage:
    28 V
    Id:
    270 mA
    Package:
    Earless
    Process:
    GaN
    Type:
    RF Power Discrete Transistors

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    Product Specifications For T2G6001528-Q3 RF Power Transistor
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