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T2G6000528-Q3

Model Number: T2G6000528-Q3

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The TriQuint T2G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides greater than 10 dB gain at 6 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Features:

Frequency: DC to 6 GHz

Linear Gain: > 10 dB at 6 GHz

Operating Voltage: 28 V

Output Power (P3dB): > 7 W at 6 GHz

Lead-free and RoHS compliant

Low thermal resistance package

Part Number: T2G6000528-Q3
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-T2G6000528-Q3-001

Part Function	Part Number	Description
Evaluation Board	T2G6000528Q3EVB03 Qorvo	Evaluation board for T1G6000528-Q3

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Product Specifications For T2G6000528-Q3 RF Power Transistor

Part Number: T2G6000528-Q3 Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

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$75.35

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Description	Units Per Format	Available

Description	Units Per Format	Available

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T2G6000528-Q3

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

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T2G6000528-Q3

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

Technical Inquiry Request for T2G6000528-Q3 RF Power Transistor

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