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RFG1M20090

Model Number: RFG1M20090

RF Power Transistor from Qorvo

RF Power Transistor, 1.8 - 2.2 GHz, 90 W, 14.5 dB, 48V, GaN, RF400-2

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

1.8GHz to 2.2GHz 90W GaN Power Amplifier

The RFG1M20090 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed and WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20090 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.

Part Number: RFG1M20090
Frequency Min: 1.8 GHz
Frequency Max: 2.2 GHz
Output Power: 90 W
Gain: 14.5 dB
% Typ Efficiency: 35
Supply Voltage: 48 V
Id: 300 mA
Package: Flange
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	RFG1M20180 Qorvo	RF Power Transistor, 1.8 - 2.2 GHz, 180 W, 48V, GaN, RF400-2

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Product Specifications For RFG1M20090 RF Power Transistor

Part Number: RFG1M20090 Manufacturer: Qorvo Product Description: RF Power Transistor, 1.8 - 2.2 GHz, 90 W, 14.5 dB, 48V, GaN, RF400-2

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RFG1M20090

RF Power Transistor from Qorvo

RF Power Transistor, 1.8 - 2.2 GHz, 90 W, 14.5 dB, 48V, GaN, RF400-2

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RFG1M20090

RF Power Transistor from Qorvo

RF Power Transistor, 1.8 - 2.2 GHz, 90 W, 14.5 dB, 48V, GaN, RF400-2

Technical Inquiry Request for RFG1M20090 RF Power Transistor

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