Part number UJ4SC075011B7S Product Type SiC FET from Manufacturer UnitedSiC (now Qorvo)

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance:
Overview
Qorvo's UJ4SC075011B7S is a 750 V, 11 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.

Key Features

  • On-resistance (RDS(on)): 11 mohm (typ)
  • Maximum operating temperature: 175 °C
  • Excellent reverse recovery: Qrr = 274 nC
  • Low body diode VFSD: 1.1 V
  • Low gate charge: QG = 75 nC
  • Threshold voltage VG(th): 4.5 V (typ) allowing 0 to 15 V drive
Typical Applications
  • EV charging
  • PV inverters
  • Switched-mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating
Part Number:
UJ4SC075011B7S
Voltage:
750 V
Rds(on):
11 mΩ
Current:
104 A
Type:
FET
Configuration:
Cascode
Generation:
Gen 4
Tj Max:
175 °C
Qualification:
JEDEC
Package:
D2PAK-7L

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