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UJ3N065080K3S

SiC JFET from UnitedSiC (now Qorvo)

650V, 80mOhm, 32A, SiC JFET, G3, TO-247-3L, AEC-Q101, 175 Deg C

Status: Standard | Data Sheet:

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Overview

Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Key Features

On-resistance (RDS(on)): 80 mohm (typ)
Voltage controlled
Maximum operating temperature: 175 °C
Extremely fast switching not dependent on temperature
Low gate charge
Low intrinsic capacitance

Typical Applications

Over current protection circuits
DC-AC inverters
Switched-mode power supplies
Power factor correction modules
Motor drives
Induction heating

Part Number: UJ3N065080K3S
Voltage: 650 V
Rds(on) (mΩ): 80
Current: 32 A
Type: JFET
Configuration: Single
Generation: Gen 3
Tj Max: 175 °C
Qualification: AEC-Q101
Package: TO-247-3L

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Product Specifications For UJ3N065080K3S SiC JFET

Part Number: UJ3N065080K3S Manufacturer: UnitedSiC (now Qorvo) Product Description: 650V, 80mOhm, 32A, SiC JFET, G3, TO-247-3L, AEC-Q101, 175 Deg C

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UJ3N065080K3S

SiC JFET from UnitedSiC (now Qorvo)

650V, 80mOhm, 32A, SiC JFET, G3, TO-247-3L, AEC-Q101, 175 Deg C

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UJ3N065080K3S

SiC JFET from UnitedSiC (now Qorvo)

650V, 80mOhm, 32A, SiC JFET, G3, TO-247-3L, AEC-Q101, 175 Deg C

Technical Inquiry Request for UJ3N065080K3S SiC JFET

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