Part number UF4C120053K4S Product Type SiC FET from Manufacturer UnitedSiC (now Qorvo)

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance:
Overview
Qorvo's UF4C120053K4S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.

Key Features

  • On-resistance (RDS(on)): 53 mohm (typ)
  • Maximum operating temperature: 175 °C
  • Excellent reverse recovery: Qrr = 216 nC
  • Low body diode VFSD: 1.28 V
  • Low gate charge: QG = 37.8 nC
  • Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive
Typical Applications
  • EV charging
  • PV inverters
  • Switched-mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating
Part Number:
UF4C120053K4S
Voltage:
1200 V
Rds(on):
53 mΩ
Current:
34 A
Type:
FET-Fast
Configuration:
Cascode
Generation:
Gen 4
Tj Max:
175 °C
Qualification:
JEDEC
Package:
TO-247-4L
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