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UF3C065030K3S

SiC FET from UnitedSiC (now Qorvo)

650V, 27mOhm, 85A, SiC FAST FET, CASCODE, G3, TO-247-3L, AEC-Q101, 175 Deg C

Status: Standard | Data Sheet:

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Overview

Qorvo's UF3C065030K3S 650 V, 27 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are available in a TO-247-3L package and are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

Key Features

On-resistance (RDS(on)): 27 mohm (typ)
Maximum operating temperature: 175 °C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2

Typical Applications

EV charging
PV inverters
Switched-mode power supplies
Power factor correction modules
Motor drives
Induction heating

Part Number: UF3C065030K3S
Voltage: 650 V
Rds(on): 27 mΩ
Current: 85 A
Type: FET-Fast
Configuration: Cascode
Generation: Gen 3
Tj Max: 175 °C
Qualification: AEC-Q101
Package: TO-247-3L

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Product Specifications For UF3C065030K3S SiC FET

Part Number: UF3C065030K3S Manufacturer: UnitedSiC (now Qorvo) Product Description: 650V, 27mOhm, 85A, SiC FAST FET, CASCODE, G3, TO-247-3L, AEC-Q101, 175 Deg C

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Replacement Part(s) Suggested

The part UF3C065030K3S is discontinued, below is the suggested replacement part.

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UF3C065030K3S

SiC FET from UnitedSiC (now Qorvo)

650V, 27mOhm, 85A, SiC FAST FET, CASCODE, G3, TO-247-3L, AEC-Q101, 175 Deg C

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UF3C065030K3S

SiC FET from UnitedSiC (now Qorvo)

650V, 27mOhm, 85A, SiC FAST FET, CASCODE, G3, TO-247-3L, AEC-Q101, 175 Deg C

Technical Inquiry Request for UF3C065030K3S SiC FET

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